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DMG1016UDW
Electrical Characteristics P-CHANNEL – Q2 (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
-20
—
—
V
V GS = 0V, I D = -250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T c = +25°C
I DSS
I GSS
—
—
—
—
-100
±2.0
nA
μ A
V DS = -20V, V GS = 0V
V GS = ±4.5V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
-0.5
—
-1.0
V
V DS = V GS , I D = -250 μ A
—
0.5
0.75
V GS = -4.5V, I D = -430mA
Static Drain-Source On-Resistance
R DS (ON)
0.7
1.05
?
V GS = -2.5V, I D = -300mA
1.0
1.5
V GS = -1.8V, I D = -150mA
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
|Y fs |
V SD
—
—
0.9
-0.8
—
-1.2
S
V
V DS = -10V, I D = -250mA
V GS = 0V, I S = -150mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
59.76
12.07
6.36
622.4
100.3
132.2
5.1
8.1
28.4
20.72
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
V DS = -16V, V GS = 0V,
f = 1.0MHz
V GS = -4.5V, V DS = -10V,
I D = -250mA
V DS = -10V, V GS = -4.5V,
R G = 10 ? , R L = 47 ?
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
5 of 9
www.diodes.com
January 2014
? Diodes Incorporated
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